| PART |
Description |
Maker |
| AOTF12N60FD |
600V, 12A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| AOTF9610 AOT9610 AOTF12N60 AOT12N60 |
600V, 12A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| HGTP12N60D1 |
12A/ 600V N-Channel IGBT
|
Intersil Corporation
|
| HGTG12N60D1 HGTG12N60D1D |
12A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
|
INTERSIL[Intersil Corporation]
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N6 |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
|
Fairchild Semiconductor
|
| SSU2N60B SSR2N60B SSR2N60 SSU2N60BTU SSR2N60BTF SS |
600V N-Channel MOSFET
600V N-Channel MOSFET 1.8 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
600V N-Channel B-FET / Substitute of SSU2N60A
600V N-Channel B-FET / Substitute of SSR2N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STD12NF06-1 STD12NF06T4 STD12NF06 |
N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET II Power MOSFET
N-channel 60V - 0.08ヘ - 12A - DPAK - IPAK STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
| IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A)
CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
